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IPD-0109

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IPD-0109

Product introduction: The IPD-0109 monolithic integrated 0-degree power divider has low insertion loss and excellent port standing wave characteristics in the frequency range of 1-9GHz, and the isolation is greater than 23B, which is very suitable for microwave hybrid integrated circuits and multi-chips Module. The chip uses an on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are required, and it is simple and convenient to use. The back of the chip is metallized, which is suitable for eutectic sintering or conductive adhesive bonding process. Use limit parameters' Maximum input power +40dBm Operating temperature -55~+85°c storage temperature -65~+150°c [1] Exceeding any of the above maximum limits may cause permanent damage.
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Number of views:
1000
Product serial number
Function:
2 work points
Frequency range (GHz):
1-9
Insertion loss (dB):
0.9
Insertion loss flatness (dB):
±0.3
Input echo (dB):
21
Output echo (dB):
21.5
Isolation (dB):
22
Encapsulation:
DIE
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+
Stock:
0
Category
RETURN
1

Category:GaAs voltage

Product description
Parameters
Product introduction:
The IPD-0109 monolithic integrated 0-degree power divider has low insertion loss and excellent port standing wave characteristics in the frequency range of 1-9GHz, and the isolation is greater than 23B, which is very suitable for microwave hybrid integrated circuits and multi-chips Module. The chip uses an on-chip through-hole metallization process to ensure good grounding, no additional grounding measures are required, and it is simple and convenient to use. The back of the chip is metallized, which is suitable for eutectic sintering or conductive adhesive bonding process.
Use limit parameters'
Maximum input power
+40dBm
Operating temperature
-55~+85°c
storage temperature
-65~+150°c
[1] Exceeding any of the above maximum limits may cause permanent damage.
We could not find any corresponding parameters, please add them to the properties table
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