Find the product you need
搜索
Number of views:
1000
IGB-005B
Retail price
0.0
元
Market price
0.0
元
Number of views:
1000
Product serial number
Frequency range (GHz):
DC-4
Gain (dB):
20
Noise figure (Typ.dB):
2.8
P-1dB(dBm):
17.0
OIP3(dBm):
33
Input/output return loss (dB):
20/23
Current (mA):
64
Encapsulation:
DIE
Quantity
-
+
Stock:
0
Category:GaAs voltage
Product description
Parameters
Performance characteristics:
Functional block diagram:
Frequency range: DC-4GHz
Small signal gain: 14.5dB
io
Gain flatness: +0.25dB
Noise figure: 4.0dB
↓
P-1dB: 15.5dBm
OIP3: 33.5dBm@1GHz with Pin =-5dBm current: 60mA
50Ohm input/output 100% on-chip test
Chip size: 0.62 x 0.62 x 0.1 mm
Product introduction:
IGB-004B is an arsenide monolithic amplifier operating at DC-4GHz. The external choke inductor at the output provides 14.5dB gain, +15.5dBm P-1dB output power and +31.5dBm output OIP3 under the working current of the circuit.
Keyword:
igb-005b
output
the
gain
14.5db
oip3
0.62
p-1db
at
15.5dbm
Previous
None
Next
None
High-level Talent Technology Team In Anhui Province
2020 Hefei High-tech Zone Gazelle Cultivation Enterprise Certificate
2020 Hefei Semiconductor Industry Association Membership Card
Honorary Certificate Of Gazelle Cultivation Enterprise In Hefei High-tech Zone In 2019
FOLLOW US
Hefei IC Valley Microelectronics Co., Ltd.
Telephone:
Address:
Block E, Provincial Science and Technology Achievement Transformation Base, No. 425, Chuangxin Avenue
High-tech Zone, Hefei
© 2021 Hefei IC Valley Microelectronics Co., Ltd. 皖ICP备19018214号 Powered by www.300.cn