IGB-001B

Performance characteristics: Frequency range: DC-8GHz Small signal gain: 13dB Gain flatness: +0.3dB Noise figure: 4.2dBP-1dB: 11.5dBm OIP3: 25.5dBm@1GHz with Pin = -7dBm Current: 38mA 50Ohm input/output 100% on-chip test Chip size: 0.62 x 0.62 x 0.1 mm Product introduction: IGB-001B is an arsenic integrated monolithic amplifier operating at DC-8GHz. The circuit is biased by the external choke inductance at the output, and at operating current, it provides 13B gain, +11.5dBm P-1dB output power and +25.5dBm output OIP3.

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Number of views:

1000

Product serial number

Frequency range (GHz):

DC-8

Gain (dB):

Noise figure (Typ.dB):

4.2

P-1dB(dBm):

11.5

OIP3(dBm):

25.5

Input/output return loss (dB):

23/20

Current (mA):

Encapsulation:

DIE

Quantity

Stock:

Category

RETURN

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Category：GaAs voltage

HONOR

Product description

Parameters

Performance characteristics:

Frequency range: DC-8GHz Small signal gain: 13dB Gain flatness: +0.3dB Noise figure: 4.2dBP-1dB: 11.5dBm

OIP3: 25.5dBm@1GHz with Pin = -7dBm

Current: 38mA

50Ohm input/output 100% on-chip test

Chip size: 0.62 x 0.62 x 0.1 mm

Product introduction:

IGB-001B is an arsenic integrated monolithic amplifier operating at DC-8GHz. The circuit is biased by the external choke inductance at the output, and at operating current, it provides 13B gain, +11.5dBm P-1dB output power and +25.5dBm output OIP3.