Based on advanced and stable GaAs (gallium arsenide) and GaN (gallium nitride) process lines at home and abroad, Core Valley Microelectronics has low noise amplifiers, ultra-wideband power amplifiers, high linear power amplifiers, and high power in the DC-110G frequency range Design, development and batch of microwave and millimeter wave integrated chip circuits such as GaN die, high-power internal matched tube amplifiers (IMFETs), multi-function chips, switches, attenuators, phase shifters, frequency multipliers, mixers, VCOs, etc. Production capacity.